Optical studies of bulk and homoepitaxial films of III-V nitride semiconductorsFREITAS, Jaime A.Journal of crystal growth. 2005, Vol 281, Num 1, pp 168-182, issn 0022-0248, 15 p.Conference Paper

Properties of the state of the art of bulk III―V nitride substrates and homoepitaxial layersFREITAS, Jaime A.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 7, issn 0022-3727, 073001.1-073001.13Article

Bulk Nitride Workshop. The international workshop on bulk semiconductors IIIFREITAS, Jaime A; SITAR, Zlatko.Journal of crystal growth. 2005, Vol 281, Num 1, issn 0022-0248, 204 p.Conference Proceedings

Proceedings of the 4th International Workshop on Bulk Nitride Semiconductors IV (IWBNS): 17-22 October 2006, Makino, Shiga, JapanFREITAS, Jaime A; HANSER, Drew; KOUKITOU, Akinori et al.Journal of crystal growth. 2007, Vol 305, Num 2, issn 0022-0248, 124 p.Conference Proceedings

Penetration depth profiling of proton-irradiated 4H-SiC at 6 MeV and 8 MeV by micro-Raman spectroscopyKIM, Hong-Yeol; KIM, Jihyun; FREITAS, Jaime A et al.Applied surface science. 2013, Vol 270, pp 44-48, issn 0169-4332, 5 p.Article

Residual impurities in GaN substrates and epitaxial layers grown by various techniquesMURTHY, Madhu; FREITAS, Jaime A; KIM, Jihyun et al.Journal of crystal growth. 2007, Vol 305, Num 2, pp 393-398, issn 0022-0248, 6 p.Conference Paper

Crystal polarity role in Mg incorporation during GaN solution growthFREITAS, Jaime A; FEIGELSON, Boris N; ANDERSON, Travis J et al.Journal of crystal growth. 2014, Vol 403, pp 90-95, issn 0022-0248, 6 p.Conference Paper

8th International Workshop on Bulk Nitrides Semiconductors (IWBNS VIII)FREITAS, Jaime A; MEISSNER, Elke; PASKOVA, Tanya et al.Journal of crystal growth. 2014, Vol 403, issn 0022-0248, 131 p.Conference Proceedings

Bulk nitride growth and related techniques. International Specialist Meeting, Foz do Iguaç´u, Brazil, 12-16 November 2000KUECH, T. F; BABCOCK, S. E; FREITAS, Jaime A et al.Journal of crystal growth. 2001, Vol 231, Num 3, issn 0022-0248, 124 p.Conference Proceedings

The Proceedings of the International Workshop on Bulk Nitride Semiconductors V (IWBNS5)FREITAS, Jaime A; HANSER, Drew; DA SILVA, Antonio F et al.Journal of crystal growth. 2008, Vol 310, Num 17, issn 0022-0248, 129 p.Conference Proceedings

TEM studies of GaN layers grown in non-polar direction : Laterally overgrown and pendeo-epitaxial layersLILIENTAL-WEBER, Z.Journal of crystal growth. 2008, Vol 310, Num 17, pp 4011-4015, issn 0022-0248, 5 p.Conference Paper

Cubic III-nitrides-a key to understand radiative recombination in nitride heterostructures?LISCHKA, K.Journal of crystal growth. 2001, Vol 231, Num 3, pp 415-419, issn 0022-0248Conference Paper

Linear optical response of zinc-blende and wurtzite III-N (III = B, Al, Ga, and In)PERSSON, C; FERREIRA DA SILVA, A.Journal of crystal growth. 2007, Vol 305, Num 2, pp 408-413, issn 0022-0248, 6 p.Conference Paper

Prospects for the ammonothermal growth of large GaN crystalFUKUDA, Tsuguo; EHRENTRAUT, Dirk.Journal of crystal growth. 2007, Vol 305, Num 2, pp 304-310, issn 0022-0248, 7 p.Conference Paper

Growth of GaN crystals from molten solution with Ga free solvent using a temperature gradientFEIGELSON, B. N; HENRY, R. L.Journal of crystal growth. 2005, Vol 281, Num 1, pp 5-10, issn 0022-0248, 6 p.Conference Paper

Growth of thick AlN layers by hydride vapor-phase epitaxyKUMAGAI, Yoshinao; YAMANE, Takayoshi; KOUKITU, Akinori et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 62-67, issn 0022-0248, 6 p.Conference Paper

Identification of donors, acceptors, and traps in bulk-like HVPE GaNLOOK, D. C; FANG, Z.-Q; CLAFLIN, B et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 143-150, issn 0022-0248, 8 p.Conference Paper

Thermodynamic analysis of AlGaN HVPE growthKOUKITU, Akinori; KIKUCHI, Jun; KANGAWA, Yoshihiro et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 47-54, issn 0022-0248, 8 p.Conference Paper

Rate of radiative and nonradiative recombination in bulk GaN grown by various techniquesJURSENAS, S; MIASOJEDOVAS, S; ZUKAUSKAS, A et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 161-167, issn 0022-0248, 7 p.Conference Paper

DFT study of ammonia desorption from the GaN(0001) surface covered with a NH₃/NH₂ mixtureKEMPISTY, Pawel; STRAK, Pawel; SAKOWSKI, Konrad et al.Journal of crystal growth. 2014, Vol 403, pp 105-109, issn 0022-0248, 5 p.Conference Paper

Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxyNOVIKOV, S. V; POWELL, R. E. L; STADDON, C. R et al.Journal of crystal growth. 2014, Vol 403, pp 43-47, issn 0022-0248, 5 p.Conference Paper

Feasibility of density and viscosity measurements under ammonothermal conditionsSTEIGERWALD, Thomas G; ALT, Nicolas S. A; HERTWECK, Benjamin et al.Journal of crystal growth. 2014, Vol 403, pp 59-65, issn 0022-0248, 7 p.Conference Paper

Optical and electrical properties of dislocations in plastically deformed GaNYONENAGA, I; OHNO, Y; YAO, T et al.Journal of crystal growth. 2014, Vol 403, pp 72-76, issn 0022-0248, 5 p.Conference Paper

Symposium on Wide Bandgap Semiconductors (III-Nitrides, SiC, and Diamond): Part of the International Union of Materials Research Societies and International Conference on Electronic Materials 2010 (IUMRS&ICEM - Korea 2010)FREITAS, Jaime A; KIM, Jihyun; JONG KYU KIM et al.Journal of crystal growth. 2011, Vol 326, Num 1, issn 0022-0248, 221 p.Conference Proceedings

Effect of Ga content and sintering time on electrical properties of InGaZnO thin film transistors fabricated by sol-gel processJUN HYUK CHOI; SOO MIN HWANG; CHANG MIN LEE et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 175-178, issn 0022-0248, 4 p.Conference Paper